We studied the proximity gettering of heavy metals by secondary defects, using high energy, high dose ion implantation by means of intentionally contaminating samples with copper and iron. It was demonstrated that the secondary defects induced by high energy boron or silicon implantation can act as a gettering site of heavy metals and reduce the junction leakage current. The proximity gettering by silicon implantation is more effective than that by boron implantation. Moreover it seems to be difficult to getter iron atoms in comparison with copper atoms.
|Published - 1992
|Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
継続期間: 1992 8月 26 → 1992 8月 28
|Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
|92/8/26 → 92/8/28
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