抄録
The thermal stability of electroless Ni-P alloy thin film resistors for pulse heating was investigated using the step stress test method. The resistance of electroless Ni-P resistors is decreased by pulse heating. It was confirmed by a micro x-ray diffraction analysis of the resistors after the step stress test that this resistance decrease is due to crystallization of the resistor films. The degree of crystallization can be quantitatively evaluated as the temperature coefficient of resistance of Ni-P films calculated from resistance changes during pulse heating. The step stress test is demonstrated to be an effective and quick method of determining the thermal stability of thin film resistors for pulse heating, and it also gives an evaluation of the temperature coefficient of resistance of thin film resistors.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 748-752 |
| ページ数 | 5 |
| ジャーナル | Journal of the Electrochemical Society |
| 巻 | 136 |
| 号 | 3 |
| DOI | |
| 出版ステータス | Published - 1989 3月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 再生可能エネルギー、持続可能性、環境
- 表面、皮膜および薄膜
- 電気化学
- 材料化学
UN SDG
この成果は、次の持続可能な開発目標に貢献しています
