TY - GEN
T1 - Push-pull driven electro-absorption modulator integrated with dfb laser using selectively doped lateral pin diode structure
AU - Hasebe, Koichi
AU - Sato, Tomonari
AU - Takeda, Koji
AU - Kanazawa, Shigeru
AU - Fujii, Takuro
AU - Kakitsuka, Takaaki
AU - Matsuo, Shinji
PY - 2014/12/16
Y1 - 2014/12/16
N2 - We fabricated a lateral diode structure EADFB laser. A selective-doping technique to isolate all the electrodes enabled push-pull operation, which will reduce the driver circuit modulation voltage and power consumption.
AB - We fabricated a lateral diode structure EADFB laser. A selective-doping technique to isolate all the electrodes enabled push-pull operation, which will reduce the driver circuit modulation voltage and power consumption.
UR - http://www.scopus.com/inward/record.url?scp=84920173018&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84920173018&partnerID=8YFLogxK
U2 - 10.1109/ISLC.2014.160
DO - 10.1109/ISLC.2014.160
M3 - Conference contribution
AN - SCOPUS:84920173018
T3 - Conference Digest - IEEE International Semiconductor Laser Conference
SP - 54
EP - 55
BT - Conference Digest - IEEE International Semiconductor Laser Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014
Y2 - 7 September 2014 through 10 September 2014
ER -