Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

Meishoku Koh; Bungo Shigeta; Kai Igarashi; Takashi Matsukawa; Takashi Tanii; Shigetaka Mori; Iwao Ohdomari

doi:10.1063/1.115696

Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

Meishoku Koh^*, Bungo Shigeta, Kai Igarashi, Takashi Matsukawa, Takashi Tanii, Shigetaka Mori, Iwao Ohdomari

^*この研究の対応する著者

基幹理工学部

研究成果: Article › 査読

10 被引用数 (Scopus)

抄録

Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.

本文言語	English
ページ（範囲）	1552-1554
ページ数	3
ジャーナル	Applied Physics Letters
巻	68
号	11
DOI	https://doi.org/10.1063/1.115696
出版ステータス	Published - 1996

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.115696

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abstract = "Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.",

author = "Meishoku Koh and Bungo Shigeta and Kai Igarashi and Takashi Matsukawa and Takashi Tanii and Shigetaka Mori and Iwao Ohdomari",

year = "1996",

doi = "10.1063/1.115696",

language = "English",

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T1 - Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

AU - Koh, Meishoku

AU - Shigeta, Bungo

AU - Igarashi, Kai

AU - Matsukawa, Takashi

AU - Tanii, Takashi

AU - Mori, Shigetaka

AU - Ohdomari, Iwao

PY - 1996

Y1 - 1996

N2 - Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.

AB - Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.

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JF - Applied Physics Letters

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Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

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