TY - JOUR
T1 - Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation
AU - Koh, Meishoku
AU - Shigeta, Bungo
AU - Igarashi, Kai
AU - Matsukawa, Takashi
AU - Tanii, Takashi
AU - Mori, Shigetaka
AU - Ohdomari, Iwao
N1 - Copyright:
Copyright 2007 Elsevier B.V., All rights reserved.
PY - 1995
Y1 - 1995
N2 - Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.
AB - Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.
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M3 - Article
AN - SCOPUS:36449004687
SN - 0003-6951
SP - 1552
JO - Applied Physics Letters
JF - Applied Physics Letters
ER -