The polarized optical reflectance and photoreflectance spectra of an out-plane nonpolar ZnO epilayer grown by laser molecular-beam epitaxy was studied. The electric field component of its excitonic photoluminescence peak was polarized perpendicular to the  axis. The monoenergetic positron beam line was used to determine the parameters in the ZnO epilayers. The negligible impact of growth direction on the defect incorporation suggests a potential use of epitaxial ZnO as polarization-sensitive optoelectronic devices operating in ultraviolet spectral regions.
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