抄録
The polarized optical reflectance and photoreflectance spectra of an out-plane nonpolar ZnO epilayer grown by laser molecular-beam epitaxy was studied. The electric field component of its excitonic photoluminescence peak was polarized perpendicular to the [0001] axis. The monoenergetic positron beam line was used to determine the parameters in the ZnO epilayers. The negligible impact of growth direction on the defect incorporation suggests a potential use of epitaxial ZnO as polarization-sensitive optoelectronic devices operating in ultraviolet spectral regions.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1079-1081 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 84 |
| 号 | 7 |
| DOI | |
| 出版ステータス | Published - 2004 2月 16 |
ASJC Scopus subject areas
- 物理学および天文学（その他）