Radical polymer-based thin film device and its I-V characteristics

Yasunori Yonekuta; Takashi Kurata; Shigemoto Abe; Hiroyuki Nishide

Radical polymer-based thin film device and its I-V characteristics

Yasunori Yonekuta^*, Takashi Kurata, Shigemoto Abe, Hiroyuki Nishide

^*この研究の対応する著者

理工学術院総合研究所

研究成果: Conference contribution

抄録

Poly(2,2,6,6-tetramethylpiperidinyloxy methacrylate) (PTMA) is rapidly and reversibly oxidized at 0.8V. The radical polymer was spin coated to form a thin film on the ITO substrate. The device with the configuration of AI / PTMA/ ITO displayed an ON and OFF state in the conductivity by superimposed voltage.

本文言語	English
ホスト出版物のタイトル	Polymer Preprints, Japan
ページ	1694
ページ数	1
巻	54
版	1
出版ステータス	Published - 2005
イベント	54th SPSJ Annual Meeting 2005 - Yokohama 継続期間: 2005 5月 25 → 2005 5月 27

Other

Other	54th SPSJ Annual Meeting 2005
City	Yokohama
Period	05/5/25 → 05/5/27

ASJC Scopus subject areas

工学（全般）

他のファイルとリンク

引用スタイル

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title = "Radical polymer-based thin film device and its I-V characteristics",

abstract = "Poly(2,2,6,6-tetramethylpiperidinyloxy methacrylate) (PTMA) is rapidly and reversibly oxidized at 0.8V. The radical polymer was spin coated to form a thin film on the ITO substrate. The device with the configuration of AI / PTMA/ ITO displayed an ON and OFF state in the conductivity by superimposed voltage.",

keywords = "I-V Characteristics, Memory Device, Radical Polymer, Redox, Thin Film",

author = "Yasunori Yonekuta and Takashi Kurata and Shigemoto Abe and Hiroyuki Nishide",

year = "2005",

language = "English",

volume = "54",

pages = "1694",

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TY - GEN

T1 - Radical polymer-based thin film device and its I-V characteristics

AU - Yonekuta, Yasunori

AU - Kurata, Takashi

AU - Abe, Shigemoto

AU - Nishide, Hiroyuki

PY - 2005

Y1 - 2005

N2 - Poly(2,2,6,6-tetramethylpiperidinyloxy methacrylate) (PTMA) is rapidly and reversibly oxidized at 0.8V. The radical polymer was spin coated to form a thin film on the ITO substrate. The device with the configuration of AI / PTMA/ ITO displayed an ON and OFF state in the conductivity by superimposed voltage.

AB - Poly(2,2,6,6-tetramethylpiperidinyloxy methacrylate) (PTMA) is rapidly and reversibly oxidized at 0.8V. The radical polymer was spin coated to form a thin film on the ITO substrate. The device with the configuration of AI / PTMA/ ITO displayed an ON and OFF state in the conductivity by superimposed voltage.

KW - I-V Characteristics

KW - Memory Device

KW - Radical Polymer

KW - Redox

KW - Thin Film

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M3 - Conference contribution

AN - SCOPUS:33645651040

VL - 54

SP - 1694

BT - Polymer Preprints, Japan

T2 - 54th SPSJ Annual Meeting 2005

Y2 - 25 May 2005 through 27 May 2005

ER -

Radical polymer-based thin film device and its I-V characteristics

抄録

Other

ASJC Scopus subject areas

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