Rapid growth of AlN films by particle-precipitation aided chemical vapor deposition

A colorless and transparent AlN film 0.3 mm in thickness was grown on a quartz glass substrate by the reaction between AlCl₃ and NH₃ at 1073 K and atmospheric pressure. The growth rate of this film was as large as 80 nm/s. The formation of fine particles in the gas followed by their precipitation onto the substrate kept colder than the gas, due to thermophoretic and diffusional movements, was presumably responsible for this rapid growth.