抄録
The experimental receiver sensitivity of an InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers is reported. The receiver sensitivity, measured at 1. 5-1. 6 mu m wavelength and 280 Mbit/s, was minus 38. 7 dbm for a 10** minus **9 error rate, although the optimizations were not performed. But this sensitivity was better than that of a p** plus -n Ge-APD by 2. 5 db at 1. 59 mu m wavelength.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 845-846 |
| ページ数 | 2 |
| ジャーナル | Electronics Letters |
| 巻 | 19 |
| 号 | 20 |
| 出版ステータス | Published - 1983 1月 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学