Recombination dynamics of localized excitons in Al1-xIn xN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

T. Onuma; S. F. Chichibu; Y. Uchinuma; T. Sota; S. Yamaguchi; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1063/1.1592868

Recombination dynamics of localized excitons in Al_1-xIn _xN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

T. Onuma, S. F. Chichibu^*, Y. Uchinuma, T. Sota, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

59 被引用数 (Scopus)

抄録

Spontaneous emission mechanisms in strain-free Al_1-xIn _xN films on GaN templates were studied. They exhibited a large band-gap bowing with a bowing parameter of approximately -3.1eV. The time-resolved photoluminescence (TRPL) signals showed a stretched exponential decay up to 300 K, indicating that the emission was due to the radiative recombination of deeply localized excitons in disordered quantum nanostructures.

本文言語	English
ページ（範囲）	2449-2453
ページ数	5
ジャーナル	Journal of Applied Physics
巻	94
号	4
DOI	https://doi.org/10.1063/1.1592868
出版ステータス	Published - 2003 8月 15

ASJC Scopus subject areas

物理学および天文学（全般）

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10.1063/1.1592868

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引用スタイル

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AU - Uchinuma, Y.

AU - Sota, T.

AU - Yamaguchi, S.

AU - Kamiyama, S.

AU - Amano, H.

AU - Akasaki, I.

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