Spontaneous emission mechanisms in strain-free Al1-xIn xN films on GaN templates were studied. They exhibited a large band-gap bowing with a bowing parameter of approximately -3.1eV. The time-resolved photoluminescence (TRPL) signals showed a stretched exponential decay up to 300 K, indicating that the emission was due to the radiative recombination of deeply localized excitons in disordered quantum nanostructures.
|ジャーナル||Journal of Applied Physics|
|出版ステータス||Published - 2003 8月 15|
ASJC Scopus subject areas