A highly developed two dimensional superstructure was found at the Ga2Se3/GaAs epitaxial interface by transmission electron microscope observations. The atomic arrangement of the superstructure was determined by the analysis of electron diffraction patterns and high resolution transmission electron microscope images. The structure is described as a c(2x2) ordered arrangement of vacancies on the interfacial Ga plane. A possible role of the mismatch of electronic configurations at the Ga2Se3/GaAs interface in the formation of the vacancy ordering is discussed.
|ジャーナル||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版ステータス||Published - 1991 7月 1|
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