Red luminescence in pure silica glass

Ryoichi Tohmon, Yasushi Shimogaichi, Shuji Munekuni, Yoshimichi Ohki, Kaya Nagasawa, Yuryo Sakurai, Yoshimasa Hama

研究成果: Conference article査読

2 被引用数 (Scopus)


Photoluminescence measurements of the 1.9-eV (red) emission were carried out on high-purity silica glasses subjected to y-ray irradiation. The time decay of the 4.8-eV-excited-luminescence indicates that the 4.8-eV absorption and the 1.9-eV luminescence arise at two different defect sites, and that an energy transfer occurs between the two defects. Comparison with electron spin resonance observations suggests that the defect responsible for the 1.9-eV luminescence is the non-bridging oxygen hole center (NBOHC: ≡Si-O). The 4.8-eV absorption band increases when the sample is heated in an oxygen atmosphere prior to y-irradiation, suggesting that the defect responsible is related to some form of excess oxygen. The defect is tentatively identified as a negatively charged non-bridging oxygen (≡Si-0) which is formed when a peroxy linkage traps a i-induced electron, (≡Si-0-0-Si≡ + e → ≡Si-0- + •O-Si≡). Both the NBOHC and the defect responsible for the 4.8-eV absorption must be present in the glass for the 4.8-eV band excited 1.9-eV luminescence to occur.

ジャーナルProceedings of SPIE - The International Society for Optical Engineering
出版ステータスPublished - 1989 12月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学


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