Regional Bandgap Tailoring of 1550 nm-Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth

Shohei Isawa; Yota Akashi; Ryosuke Morita; Runa Kaneko; Hirokazu Okada; Atsushi Matsumoto; Koichi Akahane; Yuichi Matsushima; Hiroshi Ishikawa; Katsuyuki Utaka

doi:10.1002/pssa.201900521

Regional Bandgap Tailoring of 1550 nm-Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth

Shohei Isawa^*, Yota Akashi, Ryosuke Morita, Runa Kaneko, Hirokazu Okada, Atsushi Matsumoto, Koichi Akahane, Yuichi Matsushima, Hiroshi Ishikawa, Katsuyuki Utaka

^*この研究の対応する著者

基幹理工学部

研究成果: Article › 査読

2 被引用数 (Scopus)

抄録

The regional control of the bandgap energies using the highly stacked quantum dot (QD) on InP(311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B⁺ implantation and rapid thermal annealing (RTA) around 600 °C, in which the ion implantation depths are controlled regionally with a combination of SiO₂ and polymer (AZ) films. Controlled blue shifts of the photoluminescence (PL) spectra verify the effectiveness of the regionally controlled QDI process for application to semiconductor photonic integrated circuits using 1550 nm-band QD such as integrated wavelength division multiplexing (WDM) light sources.

本文言語	English
論文番号	1900521
ジャーナル	Physica Status Solidi (A) Applications and Materials Science
巻	217
号	3
DOI	https://doi.org/10.1002/pssa.201900521
出版ステータス	Published - 2020 2月 1

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
表面および界面
表面、皮膜および薄膜
電子工学および電気工学
材料化学

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Isawa, S., Akashi, Y., Morita, R., Kaneko, R., Okada, H., Matsumoto, A., Akahane, K., Matsushima, Y., Ishikawa, H., & Utaka, K. (2020). Regional Bandgap Tailoring of 1550 nm-Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth. Physica Status Solidi (A) Applications and Materials Science, 217(3), 記事 1900521. https://doi.org/10.1002/pssa.201900521

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title = "Regional Bandgap Tailoring of 1550 nm-Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth",

abstract = "The regional control of the bandgap energies using the highly stacked quantum dot (QD) on InP(311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B+ implantation and rapid thermal annealing (RTA) around 600 °C, in which the ion implantation depths are controlled regionally with a combination of SiO2 and polymer (AZ) films. Controlled blue shifts of the photoluminescence (PL) spectra verify the effectiveness of the regionally controlled QDI process for application to semiconductor photonic integrated circuits using 1550 nm-band QD such as integrated wavelength division multiplexing (WDM) light sources.",

keywords = "intermixing, ion implantations, quantum dots, rapid thermal annealing",

author = "Shohei Isawa and Yota Akashi and Ryosuke Morita and Runa Kaneko and Hirokazu Okada and Atsushi Matsumoto and Koichi Akahane and Yuichi Matsushima and Hiroshi Ishikawa and Katsuyuki Utaka",

note = "Funding Information: This article is based on results obtained from a project commissioned by the New Energy and Industrial Technology Development Organization (NEDO). Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2020",

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doi = "10.1002/pssa.201900521",

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AU - Isawa, Shohei

AU - Akashi, Yota

AU - Morita, Ryosuke

AU - Kaneko, Runa

AU - Okada, Hirokazu

AU - Matsumoto, Atsushi

AU - Akahane, Koichi

AU - Matsushima, Yuichi

AU - Ishikawa, Hiroshi

AU - Utaka, Katsuyuki

N1 - Funding Information: This article is based on results obtained from a project commissioned by the New Energy and Industrial Technology Development Organization (NEDO). Publisher Copyright: © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2020/2/1

Y1 - 2020/2/1

N2 - The regional control of the bandgap energies using the highly stacked quantum dot (QD) on InP(311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B+ implantation and rapid thermal annealing (RTA) around 600 °C, in which the ion implantation depths are controlled regionally with a combination of SiO2 and polymer (AZ) films. Controlled blue shifts of the photoluminescence (PL) spectra verify the effectiveness of the regionally controlled QDI process for application to semiconductor photonic integrated circuits using 1550 nm-band QD such as integrated wavelength division multiplexing (WDM) light sources.

AB - The regional control of the bandgap energies using the highly stacked quantum dot (QD) on InP(311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B+ implantation and rapid thermal annealing (RTA) around 600 °C, in which the ion implantation depths are controlled regionally with a combination of SiO2 and polymer (AZ) films. Controlled blue shifts of the photoluminescence (PL) spectra verify the effectiveness of the regionally controlled QDI process for application to semiconductor photonic integrated circuits using 1550 nm-band QD such as integrated wavelength division multiplexing (WDM) light sources.

KW - intermixing

KW - ion implantations

KW - quantum dots

KW - rapid thermal annealing

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JO - Physica Status Solidi (A) Applications and Materials Science

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ER -

Regional Bandgap Tailoring of 1550 nm-Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth

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