TY - GEN
T1 - Relationship between bonding conditions and strength for joints using a Au nanoporous sheet
AU - Matsunaga, Kaori
AU - Kim, Min Su
AU - Nishikawa, Hiroshi
AU - Saito, Mikiko
AU - Mizuno, Jun
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/11/18
Y1 - 2014/11/18
N2 - As the establishment of high-temperature lead-free solders and other interconnection technologies is an urgent priority in the electronics industry, a strong drive exists to find Pb-free alternatives for high-temperature bonding processes. We propose a no-solvent, no-flux solid-state bonding technique that uses a nanoporous sheet, a process we call nanoporous bonding (NPB). Nanoporous sheets can be made from binary alloys by selective dissolution of one element. In this study, Au nanoporous sheets were fabricated by dealloying a Au-Ag binary alloy with nitric acid. The effects of joining conditions on the shear strength of joints using this sheet were investigated. The joints bonded at 350 °C showed high shear strengths of above 20 MPa. It was found that joining using Au NPB was successfully achieved, and that NPB shows potential as a Pb-free interconnection material for high-temperature electronic applications.
AB - As the establishment of high-temperature lead-free solders and other interconnection technologies is an urgent priority in the electronics industry, a strong drive exists to find Pb-free alternatives for high-temperature bonding processes. We propose a no-solvent, no-flux solid-state bonding technique that uses a nanoporous sheet, a process we call nanoporous bonding (NPB). Nanoporous sheets can be made from binary alloys by selective dissolution of one element. In this study, Au nanoporous sheets were fabricated by dealloying a Au-Ag binary alloy with nitric acid. The effects of joining conditions on the shear strength of joints using this sheet were investigated. The joints bonded at 350 °C showed high shear strengths of above 20 MPa. It was found that joining using Au NPB was successfully achieved, and that NPB shows potential as a Pb-free interconnection material for high-temperature electronic applications.
UR - http://www.scopus.com/inward/record.url?scp=84918572618&partnerID=8YFLogxK
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U2 - 10.1109/ESTC.2014.6962855
DO - 10.1109/ESTC.2014.6962855
M3 - Conference contribution
AN - SCOPUS:84918572618
T3 - ESTC 2014 - 5th Electronics System-Integration Technology Conference
BT - ESTC 2014 - 5th Electronics System-Integration Technology Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 5th Electronics System-Integration Technology Conference, ESTC 2014
Y2 - 16 September 2014 through 18 September 2014
ER -