Reliable single atom doping and discrete dopant effects on transistor performance

Takahiro Shinada*, Masahiro Hori, Yukinori Ono, Keigo Taira, Akira Komatsubara, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

*この研究の対応する著者

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

For reliable deterministic single-atom doping, i.e. single-ion implantation (SII), improvement of single-ion detection efficiency is successfully achieved by controlling channel potential using back-gate of transistor. We also fabricate transistors whose channel dopnats are introduced one-by-one using SII and find that subthreshold current becomes larger when dopants are located at drain-side than source-side. The single-atom doping method could contribute to the novel device development beneficial for extensibility of doped-channel device technologies towards atomic-scale devices and single-dopant device.

本文言語English
ホスト出版物のタイトル2010 IEEE International Electron Devices Meeting, IEDM 2010
ページ26.5.1-26.5.4
DOI
出版ステータスPublished - 2010
イベント2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
継続期間: 2010 12月 62010 12月 8

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
国/地域United States
CitySan Francisco, CA
Period10/12/610/12/8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

フィンガープリント

「Reliable single atom doping and discrete dopant effects on transistor performance」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル