Residual order within thermally grown amorphous SiO2 on crystalline silicon

K. Tatsumura, T. Watanabe, D. Yamasaki, T. Shimura, M. Umeno, I. Ohdomari

研究成果: Article査読

45 被引用数 (Scopus)


The origin of x-ray diffraction peaks observed on the crystal truncation rods (CTR’s) in reciprocal space for thermally grown SiO2 films has been investigated by large-scale atomistic simulation of silicon oxidation. Three models of SiO2 on Si(001), Si(111), and Si(113) were formed by introducing oxygen atoms in crystalline Si from the surfaces in an atom-by-atom manner. The SiO2 structures are classified as being amorphous in conventional characterizations, but retain the residual order originating from the (111) atomic planes in their parent crystals. The calculated diffraction patterns exhibit intensity peaks with Laue-function-like fringe profiles along the CTR’s, at positions depending on the substrate orientations, agreeing quite well with experimental results.

ジャーナルPhysical Review B - Condensed Matter and Materials Physics
出版ステータスPublished - 2004

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学


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