Resistance switching in anodic oxidized amorphous TiO₂ films

A thin amorphous TiO₂ layer was prepared using anodic oxidation of Ti. Resistance switching of amorphous TiO₂ was investigated by sweeping in a continuous voltage scan and pulse bias voltage. The bipolar switching was observed without the need of a forming process. Switching of the Ti/amorphous-TiO₂/Pt based structure showed good endurance. The switching mechanism and current-voltage characteristics were investigated from combinatorial analysis of the conducting filaments' evolution and the space-charge limited current conduction. The oxygen-vacancies migration involved redox processes, which is responsible for the recovery and rupture of sub-TiO_x based conducting filaments Inside the amorphous TiO ₂ layer.