TY - GEN
T1 - Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature
AU - Prati, Enrico
AU - Celebrano, Michele
AU - Ghirardini, Lavinia
AU - Finazzi, Marco
AU - Ferrari, Giorgio
AU - Shinada, Takahiro
AU - Gi, Keinan
AU - Chiba, Yuki
AU - Abdelghafar, Ayman
AU - Yano, Maasa
AU - Tanii, Takashi
N1 - Funding Information:
ACKNOWLEDGEMENT E.P. acknowledges JSPS, the Short Term Mobility Program 2015 of CNR and the Short Term Mobility Program 2016 of CNR. This work was supported by a Grant-in-Aid for Basic Research (B) (25289109) from MEXT and Young Scientists (A) (15H05413) from MEXT.
Publisher Copyright:
© 2019 JSAP.
PY - 2019/6
Y1 - 2019/6
N2 - We report on the photocurrent induced by 1550 nm laser irradiation in a Er-doped micron-scale silicon transistor. The erbium defects, activated in the channel of the transistor thanks to oxygen codoping, make it possible to observe a resonant photocurrent at telecom wavelength and at room temperature by using a supercontinuum laser source working in the μW range. By exploiting a back-gate, the transistor is tuned to exploit only the electrons lying in the Er-O states. We estimate a relatively small number of photoexcited atoms (∼ 4× 104) making Er-dpoed silicon a candidate for designing resonance-based frequency selective single photon detectors at 1550 nm for quantum communications.
AB - We report on the photocurrent induced by 1550 nm laser irradiation in a Er-doped micron-scale silicon transistor. The erbium defects, activated in the channel of the transistor thanks to oxygen codoping, make it possible to observe a resonant photocurrent at telecom wavelength and at room temperature by using a supercontinuum laser source working in the μW range. By exploiting a back-gate, the transistor is tuned to exploit only the electrons lying in the Er-O states. We estimate a relatively small number of photoexcited atoms (∼ 4× 104) making Er-dpoed silicon a candidate for designing resonance-based frequency selective single photon detectors at 1550 nm for quantum communications.
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U2 - 10.23919/SNW.2019.8782962
DO - 10.23919/SNW.2019.8782962
M3 - Conference contribution
AN - SCOPUS:85070864415
T3 - 2019 Silicon Nanoelectronics Workshop, SNW 2019
BT - 2019 Silicon Nanoelectronics Workshop, SNW 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th Silicon Nanoelectronics Workshop, SNW 2019
Y2 - 9 June 2019 through 10 June 2019
ER -