TY - GEN
T1 - RF diamond MISFETs using surface accumulation layer
AU - Hirama, K.
AU - Koshiba, T.
AU - Yohara, K.
AU - Takayanagi, H.
AU - Yamauchi, S.
AU - Satoh, M.
AU - Kawarada, H.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - Diamond metal-insulator-semiconductor field-effect-transistors (MISFETs) utilizing a hole accumulation layer have been fabricated on a hydrogen-terminated (H-terminated) diamond surface. The highest cut-off frequency (fT) of 30 GHz and the maximum frequency of oscillation (fmax) of 60 GHz were obtained in the 0.35 μm gate diamond MISFET. RF power operations of diamond MISFETs were demonstrated for the first time. In RF power operation, the high power density of 2.14 W/mm was obtained at 1 GHz.
AB - Diamond metal-insulator-semiconductor field-effect-transistors (MISFETs) utilizing a hole accumulation layer have been fabricated on a hydrogen-terminated (H-terminated) diamond surface. The highest cut-off frequency (fT) of 30 GHz and the maximum frequency of oscillation (fmax) of 60 GHz were obtained in the 0.35 μm gate diamond MISFET. RF power operations of diamond MISFETs were demonstrated for the first time. In RF power operation, the high power density of 2.14 W/mm was obtained at 1 GHz.
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M3 - Conference contribution
AN - SCOPUS:34247464808
SN - 0780397142
SN - 9780780397149
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
BT - Proceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
T2 - 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
Y2 - 4 June 2006 through 8 June 2006
ER -