RF Performance of Diamond Surface-Channel Field-Effect Transistors

Hitoshi Umezawa; Shingo Miyamoto; Hiroki Matsudaira; Hiroaki Ishizaka; Kwang Soup Song; Minoru Tachiki; Hiroshi Kawarada

RF Performance of Diamond Surface-Channel Field-Effect Transistors

Hitoshi Umezawa^*, Shingo Miyamoto, Hiroki Matsudaira, Hiroaki Ishizaka, Kwang Soup Song, Minoru Tachiki, Hiroshi Kawarada

^*この研究の対応する著者

基幹理工学部

研究成果: Article › 査読

1 被引用数 (Scopus)

抄録

RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 μm gate diamond MISFETs with a CaF₂ gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.

本文言語	English
ページ（範囲）	1949-1954
ページ数	6
ジャーナル	IEICE Transactions on Electronics
巻	E86-C
号	10
出版ステータス	Published - 2003 10月

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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title = "RF Performance of Diamond Surface-Channel Field-Effect Transistors",

abstract = "RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 μm gate diamond MISFETs with a CaF2 gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.",

keywords = "CaF, Cut-off frequency, Diamond, Hydrogen-terminated surface channel, MESFET, MISFET, Mobility",

author = "Hitoshi Umezawa and Shingo Miyamoto and Hiroki Matsudaira and Hiroaki Ishizaka and Song, {Kwang Soup} and Minoru Tachiki and Hiroshi Kawarada",

year = "2003",

month = oct,

language = "English",

volume = "E86-C",

pages = "1949--1954",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

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TY - JOUR

T1 - RF Performance of Diamond Surface-Channel Field-Effect Transistors

AU - Umezawa, Hitoshi

AU - Miyamoto, Shingo

AU - Matsudaira, Hiroki

AU - Ishizaka, Hiroaki

AU - Song, Kwang Soup

AU - Tachiki, Minoru

AU - Kawarada, Hiroshi

PY - 2003/10

Y1 - 2003/10

N2 - RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 μm gate diamond MISFETs with a CaF2 gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.

AB - RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 μm gate diamond MISFETs with a CaF2 gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.

KW - CaF

KW - Cut-off frequency

KW - Diamond

KW - Hydrogen-terminated surface channel

KW - MESFET

KW - MISFET

KW - Mobility

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M3 - Article

AN - SCOPUS:0242580192

SN - 0916-8524

VL - E86-C

SP - 1949

EP - 1954

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 10

ER -

RF Performance of Diamond Surface-Channel Field-Effect Transistors

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