TY - GEN
T1 - RF response of PIN photodiode with avalanche multiplication using quantum dots
AU - Umezawa, T.
AU - Akahane, K.
AU - Kanno, A.
AU - Kawanishi, T.
PY - 2013/10/18
Y1 - 2013/10/18
N2 - We fabricate a new PIN photodiode using InAs/InAlGaAs quantum dot absorption layer with an avalanche multiplication, low breakdown temperature coefficient, and high frequency response. Multiplication factors of M = 1 to M = 12 and the RF response over 10GHz are reported.
AB - We fabricate a new PIN photodiode using InAs/InAlGaAs quantum dot absorption layer with an avalanche multiplication, low breakdown temperature coefficient, and high frequency response. Multiplication factors of M = 1 to M = 12 and the RF response over 10GHz are reported.
UR - http://www.scopus.com/inward/record.url?scp=84885436882&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885436882&partnerID=8YFLogxK
U2 - 10.1109/CLEOPR.2013.6600243
DO - 10.1109/CLEOPR.2013.6600243
M3 - Conference contribution
AN - SCOPUS:84885436882
SN - 9781467364751
T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
BT - 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
T2 - 10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
Y2 - 30 June 2013 through 4 July 2013
ER -