Robustness of CNT via interconnect fabricated by low temperature process over a high-density current

Akio Kawabata; Shintaro Sato; Tatsuhiro Nozue; Takashi Hyakushima; Masaaki Norimatsu; Miho Mishima; Tomo Murakami; Daiyu Kondo; Koji Asano; Mari Ohfuti; Hiroshi Kawarada; Tadashi Sakai; Mizuhisa Nihei; Yuji Awano

doi:10.1109/IITC.2008.4546977

Robustness of CNT via interconnect fabricated by low temperature process over a high-density current

Akio Kawabata^*, Shintaro Sato, Tatsuhiro Nozue, Takashi Hyakushima, Masaaki Norimatsu, Miho Mishima, Tomo Murakami, Daiyu Kondo, Koji Asano, Mari Ohfuti, Hiroshi Kawarada, Tadashi Sakai, Mizuhisa Nihei, Yuji Awano

^*この研究の対応する著者

基幹理工学部

研究成果: Conference contribution

47 被引用数 (Scopus)

抄録

We fabricated a carbon nanotube (CNT) via interconnect and evaluated its robustness over a high-density current. CNTs were synthesized at temperatures as low as 365°C, which is probably the lowest for this application, without degrading the ultra low-k interlayer dielectrics (k = 2.6). We measured the electrical properties of CNT vias as small as 160 nm in diameter and found that a CNT via was able to sustain a current density as high as 5.0×10 ⁶ A/cm² at 105°C for 100 hours without any deterioration in its properties.

本文言語	English
ホスト出版物のタイトル	2008 IEEE International Interconnect Technology Conference, IITC
ページ	237-239
ページ数	3
DOI	https://doi.org/10.1109/IITC.2008.4546977
出版ステータス	Published - 2008 9月 9
イベント	2008 IEEE International Interconnect Technology Conference, IITC - Burlingame, CA, United States 継続期間: 2008 6月 1 → 2008 6月 4

出版物シリーズ

名前	2008 IEEE International Interconnect Technology Conference, IITC

Conference

Conference	2008 IEEE International Interconnect Technology Conference, IITC
国/地域	United States
City	Burlingame, CA
Period	08/6/1 → 08/6/4

ASJC Scopus subject areas

ハードウェアとアーキテクチャ
電子工学および電気工学

文献へのアクセス

10.1109/IITC.2008.4546977

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引用スタイル

Kawabata, A., Sato, S., Nozue, T., Hyakushima, T., Norimatsu, M., Mishima, M., Murakami, T., Kondo, D., Asano, K., Ohfuti, M., Kawarada, H., Sakai, T., Nihei, M., & Awano, Y. (2008). Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. In 2008 IEEE International Interconnect Technology Conference, IITC (pp. 237-239). 記事 4546977 (2008 IEEE International Interconnect Technology Conference, IITC). https://doi.org/10.1109/IITC.2008.4546977

Kawabata, A, Sato, S, Nozue, T, Hyakushima, T, Norimatsu, M, Mishima, M, Murakami, T, Kondo, D, Asano, K, Ohfuti, M, Kawarada, H, Sakai, T, Nihei, M & Awano, Y 2008, Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. in 2008 IEEE International Interconnect Technology Conference, IITC., 4546977, 2008 IEEE International Interconnect Technology Conference, IITC, pp. 237-239, 2008 IEEE International Interconnect Technology Conference, IITC, Burlingame, CA, United States, 08/6/1. https://doi.org/10.1109/IITC.2008.4546977

Kawabata A, Sato S, Nozue T, Hyakushima T, Norimatsu M, Mishima M その他. Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. In 2008 IEEE International Interconnect Technology Conference, IITC. 2008. p. 237-239. 4546977. (2008 IEEE International Interconnect Technology Conference, IITC). doi: 10.1109/IITC.2008.4546977

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abstract = "We fabricated a carbon nanotube (CNT) via interconnect and evaluated its robustness over a high-density current. CNTs were synthesized at temperatures as low as 365°C, which is probably the lowest for this application, without degrading the ultra low-k interlayer dielectrics (k = 2.6). We measured the electrical properties of CNT vias as small as 160 nm in diameter and found that a CNT via was able to sustain a current density as high as 5.0×10 6 A/cm2 at 105°C for 100 hours without any deterioration in its properties.",

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AU - Kawabata, Akio

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AU - Hyakushima, Takashi

AU - Norimatsu, Masaaki

AU - Mishima, Miho

AU - Murakami, Tomo

AU - Kondo, Daiyu

AU - Asano, Koji

AU - Ohfuti, Mari

AU - Kawarada, Hiroshi

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AB - We fabricated a carbon nanotube (CNT) via interconnect and evaluated its robustness over a high-density current. CNTs were synthesized at temperatures as low as 365°C, which is probably the lowest for this application, without degrading the ultra low-k interlayer dielectrics (k = 2.6). We measured the electrical properties of CNT vias as small as 160 nm in diameter and found that a CNT via was able to sustain a current density as high as 5.0×10 6 A/cm2 at 105°C for 100 hours without any deterioration in its properties.

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Robustness of CNT via interconnect fabricated by low temperature process over a high-density current

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Conference

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