Role of nonstoichiometry on the formation of UV absorption and luminescence bands in high-purity silica is discussed. The 5.0-eV and 3.8-eV bands are observed in "oxygen-deficient" and "oxygen-surplus" silica, respectively. The 5.0-eV band is caused by oxygen vacancies (≡Si- Si≡) and the 3.8-eV band by peroxy linkages (≡Si-0-0-Si≡). Synthesis conditions and thermal history after the synthesis are shown to affect the formation of defects such as oxygen vacancies and peroxy linkages. The 2.7-eV luminescence band observed in "oxygen-deficient" silica is shown to be primarily due to the oxygen vacancies.
|Proceedings of SPIE - The International Society for Optical Engineering
|Published - 1989
ASJC Scopus subject areas
- コンピュータ サイエンスの応用