抄録
Room-temperature cw operation of InGaAsP/InP heterostructure lasers grown by liquid-phase epitaxy was achieved at 1. 56 mu m. An active InGaAsP layer was essentially sandwiched by InP, though a thin InGaAsP buffer layer was deposited to prevent the melt-back of the active layer. Threshold current was typically 300 ma for a 17 mu m wide oxide-defined stripe laser.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 606-607 |
| ページ数 | 2 |
| ジャーナル | Electronics Letters |
| 巻 | 15 |
| 号 | 19 |
| 出版ステータス | Published - 1979 1月 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学