@inproceedings{fb948363264842668efae44d5ef3a14f,
title = "Room temperature GaN bonding by surface activated bonding methods",
abstract = "In this work, both GaN-Si and GaN-diamond bonding at room temperature were achieved by surface activated bonding (SAB) methods. In the GaN-Si bonding by standard SAB, the results of Ga-face to Si bonding are better than that of N-face to Si bonding such as higher bonding energy. Both of the structure and composition of the two kinds of GaN-Si interfaces were investigated to understand the bonding mechanisms. In the GaN-diamond bonding by modified SAB using an intermediate Si nano-layer, a uniformly seamless bonding interface was achieved. The GaN-diamond bonded structure is expected to be helpful for the applications of high-power GaN devices.",
keywords = "bonding, GaN, interface, room temperature, SAB",
author = "Fengwen Mu and Tadatomo Suga",
year = "2018",
month = oct,
day = "2",
doi = "10.1109/ICEPT.2018.8480574",
language = "English",
series = "Proceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "521--524",
editor = "Fei Xiao and Jun Wang and Lin Chen and Tianchun Ye",
booktitle = "Proceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018",
note = "19th International Conference on Electronic Packaging Technology, ICEPT 2018 ; Conference date: 08-08-2018 Through 11-08-2018",
}