Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

Fengwen Mu; Ran He; Tadatomo Suga

doi:10.1016/j.scriptamat.2018.03.016

Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

Fengwen Mu^*, Ran He, Tadatomo Suga

^*この研究の対応する著者

研究成果: Article › 査読

80 被引用数 (Scopus)

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Fabrication of GaN-on-diamond structure by bonding technology is becoming more and more attractive for high-power GaN devices. However, researches on low temperature bonding between GaN and diamond is still not well developed. This work accomplished a GaN-diamond bonding at room temperature by a modified surface-activated-bonding (SAB) method for the first time. The microstructure and composition of the bonding interface were analyzed by using scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy (EDX). The results show that the interface is uniformly bonded without any nano-voids and is considered to be suitable for the fabrication of GaN-on-diamond structure.

本文言語	English
ページ（範囲）	148-151
ページ数	4
ジャーナル	Scripta Materialia
巻	150
DOI	https://doi.org/10.1016/j.scriptamat.2018.03.016
出版ステータス	Published - 2018 6月 1
外部発表	はい

ASJC Scopus subject areas

材料科学（全般）
凝縮系物理学

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10.1016/j.scriptamat.2018.03.016

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title = "Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices",

abstract = "Fabrication of GaN-on-diamond structure by bonding technology is becoming more and more attractive for high-power GaN devices. However, researches on low temperature bonding between GaN and diamond is still not well developed. This work accomplished a GaN-diamond bonding at room temperature by a modified surface-activated-bonding (SAB) method for the first time. The microstructure and composition of the bonding interface were analyzed by using scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy (EDX). The results show that the interface is uniformly bonded without any nano-voids and is considered to be suitable for the fabrication of GaN-on-diamond structure.",

keywords = "Bonding, GaN-on-diamond, High power devices, Interface, Room temperature",

author = "Fengwen Mu and Ran He and Tadatomo Suga",

year = "2018",

month = jun,

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doi = "10.1016/j.scriptamat.2018.03.016",

language = "English",

volume = "150",

pages = "148--151",

journal = "Scripta Materialia",

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TY - JOUR

T1 - Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

AU - Mu, Fengwen

AU - He, Ran

AU - Suga, Tadatomo

PY - 2018/6/1

Y1 - 2018/6/1

N2 - Fabrication of GaN-on-diamond structure by bonding technology is becoming more and more attractive for high-power GaN devices. However, researches on low temperature bonding between GaN and diamond is still not well developed. This work accomplished a GaN-diamond bonding at room temperature by a modified surface-activated-bonding (SAB) method for the first time. The microstructure and composition of the bonding interface were analyzed by using scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy (EDX). The results show that the interface is uniformly bonded without any nano-voids and is considered to be suitable for the fabrication of GaN-on-diamond structure.

AB - Fabrication of GaN-on-diamond structure by bonding technology is becoming more and more attractive for high-power GaN devices. However, researches on low temperature bonding between GaN and diamond is still not well developed. This work accomplished a GaN-diamond bonding at room temperature by a modified surface-activated-bonding (SAB) method for the first time. The microstructure and composition of the bonding interface were analyzed by using scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy (EDX). The results show that the interface is uniformly bonded without any nano-voids and is considered to be suitable for the fabrication of GaN-on-diamond structure.

KW - Bonding

KW - GaN-on-diamond

KW - High power devices

KW - Interface

KW - Room temperature

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DO - 10.1016/j.scriptamat.2018.03.016

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Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

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