Scaling scenario of floating body cell (FBC) suppressing Vth variation due to random dopant fluctuation

Hironobu Furuhashi; Tomoaki Shino; Takashi Ohsawa; Fumiyoshi Matsuoka; Tomoki Higashi; Yoshihiro Minami; Hiroomi Nakajima; Katsuyuki Fujita; Ryo Fukuda; Takeshi Hamamoto; Akihiro Nitayama

doi:10.1109/SOI.2008.4656281

Scaling scenario of floating body cell (FBC) suppressing V_th variation due to random dopant fluctuation

Hironobu Furuhashi^*, Tomoaki Shino, Takashi Ohsawa, Fumiyoshi Matsuoka, Tomoki Higashi, Yoshihiro Minami, Hiroomi Nakajima, Katsuyuki Fujita, Ryo Fukuda, Takeshi Hamamoto, Akihiro Nitayama

^*この研究の対応する著者

研究成果: Conference contribution

16 被引用数 (Scopus)

抄録

A scaling scenario of fully-depleted floating body cell (FBC) is demonstrated in view of signal margin for stable array functionality. Measurement and numerical simulation reveal that the V_th variation of cell array transistors is mainly attributed to the random dopant fluctuation in channel region. By setting the channel impurity concentration in the order of 10¹⁶cm^-3 or lower, Gbit array functionality is guaranteed for the 32nm node and further scaled generations.

本文言語	English
ホスト出版物のタイトル	2008 IEEE International SOI Conference Proceedings
ページ	33-34
ページ数	2
DOI	https://doi.org/10.1109/SOI.2008.4656281
出版ステータス	Published - 2008 12月 24
外部発表	はい
イベント	2008 IEEE International SOI Conference - New Paltz, NY, United States 継続期間: 2008 10月 6 → 2008 10月 9

出版物シリーズ

名前	Proceedings - IEEE International SOI Conference
ISSN（印刷版）	1078-621X

Other

Other	2008 IEEE International SOI Conference
国/地域	United States
City	New Paltz, NY
Period	08/10/6 → 08/10/9

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

文献へのアクセス

10.1109/SOI.2008.4656281

他のファイルとリンク

引用スタイル

Furuhashi, H., Shino, T., Ohsawa, T., Matsuoka, F., Higashi, T., Minami, Y., Nakajima, H., Fujita, K., Fukuda, R., Hamamoto, T., & Nitayama, A. (2008). Scaling scenario of floating body cell (FBC) suppressing V_th variation due to random dopant fluctuation. In 2008 IEEE International SOI Conference Proceedings (pp. 33-34). Article 4656281 (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.2008.4656281

Furuhashi, H, Shino, T, Ohsawa, T, Matsuoka, F, Higashi, T, Minami, Y, Nakajima, H, Fujita, K, Fukuda, R, Hamamoto, T & Nitayama, A 2008, Scaling scenario of floating body cell (FBC) suppressing V_th variation due to random dopant fluctuation. in 2008 IEEE International SOI Conference Proceedings., 4656281, Proceedings - IEEE International SOI Conference, pp. 33-34, 2008 IEEE International SOI Conference, New Paltz, NY, United States, 08/10/6. https://doi.org/10.1109/SOI.2008.4656281

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