Carbon nanostructures (CN) have been selectively grown directly onto the top of nickel ion implanted nanopyramid array (Ni NPA) by the plasma enhanced chemical vapor deposition (p-CVD) technique. Firstly, NPA were fabricated by taking advantage of the anisotropic etching characteristics of silicon in hydrazine (N 2 H 4 H 2 O); where the ion implanted area acted as a mask for hydrazine etching. Secondly, carbon nanostructures were grown on Ni NPA by feeding methane/hydrogen (CH 4 /H 2 ) mixtures into p-CVD reactor. The change of concentration ratio of methane to hydrogen dramatically affected the growth selectivity of CN. Methane concentrations lower than 20%, promoted the selective growth of CN on the top of Ni NPA. Morphology and chemical nature of grown species were studied by employing scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) spectroscopy, respectively.
|ジャーナル||Applied Surface Science|
|出版ステータス||Published - 2004 7月 15|
|イベント||The Ninth International Conference on the Formation of Semicon - Madrid, Spain|
継続期間: 2003 9月 15 → 2003 9月 19
ASJC Scopus subject areas
- 化学 (全般)