@article{8e2846adc9c14a3d836cec2561cadfdb,
title = "Selective growth of ZnTe on sapphire substrates using a SiO2 mask",
abstract = "ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO2-masked sapphire substrates by molecular beam epitaxy (MBE). When ZnTe was grown at a high temperature (=350 °C), low growth rate (≦ 0.3 μm h−1), and low JTe/JZn flux ratio (≦ 0.83) compared with the conventional film growth conditions, the formation of ZnTe nuclei on the SiO2 mask was avoided. The Te flux intensity significantly affected the selectivity of ZnTe growth. The selective growth of ZnTe on sapphire was revealed to be limited by the desorption of Te adatoms from the SiO2.",
keywords = "ZnTe, heteroepitaxy, molecular beam epitaxy, sapphire, selective growth",
author = "Taizo Nakasu and Shota Hattori and Sun, {Wei Che} and Masakazu Kobayashi",
note = "Funding Information: This work was supported in part by the Waseda University Research Initiatives, by the Waseda University Grant for Special Research Projects, by a research grant from a collaboration between the Mitsubishi Materials Corporation and the Faculty of Science and Engineering at Waseda University, by a Research Fellowship for Young Scientists from the Japan Society for the Promotion of Science, and by the Foundation of Ando Laboratory. The authors acknowledge T. Asahi of JX Nippon Mining and Metals Corporation for the support. The authors acknowledge Y. Takei and K. Utaka for their contributions. Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",
year = "2016",
month = nov,
day = "1",
doi = "10.1002/pssb.201600317",
language = "English",
volume = "253",
pages = "2265--2269",
journal = "Physica Status Solidi (B) Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "11",
}