Self-timed dynamic sensing scheme for 5 V only multi-Mb flash E2PROMs

Kazuo Kobayashi; Takeshi Nakayama; Masanori Hayashikoshi; Yoshikazu Miyawaki; Yasushi Terada; Hideaki Arima; Takayuki Matsukawa; Tsutomu Yoshihara

Self-timed dynamic sensing scheme for 5 V only multi-Mb flash E²PROMs

Kazuo Kobayashi^*, Takeshi Nakayama, Masanori Hayashikoshi, Yoshikazu Miyawaki, Yasushi Terada, Hideaki Arima, Takayuki Matsukawa, Tsutomu Yoshihara

^*この研究の対応する著者

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

A novel sensing scheme for high-density and high-speed sensing with a sub-10-μA cell current is presented. A source biasing method, which enhances the cell current drivability, and dynamic flip-flop sense amplifiers, in which a reference level is generated on the unselected bit lines with dummy cells, realize the high-speed and low-power operation. The potential of the dummy column is detected to control the sense amplifiers and decoders in a self-timed manner. Simulated results ensure the effectiveness of this sensing scheme for 5-V-only megabit flash E²PROMs (electrically erasable and programmable ROMs).

本文言語	English
ホスト出版物のタイトル	Symp VLSI Circuit 1989
編集者	Anon
Place of Publication	Piscataway, NJ, United States
出版社	Publ by IEEE
ページ	39-40
ページ数	2
出版ステータス	Published - 1989
外部発表	はい
イベント	Symposium on VLSI Circuits 1989 - Kyoto, Japan 継続期間: 1989 5月 25 → 1989 5月 27

Other

Other	Symposium on VLSI Circuits 1989
City	Kyoto, Japan
Period	89/5/25 → 89/5/27

ASJC Scopus subject areas

工学（全般）

他のファイルとリンク

Link to publication in Scopus

引用スタイル

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abstract = "A novel sensing scheme for high-density and high-speed sensing with a sub-10-μA cell current is presented. A source biasing method, which enhances the cell current drivability, and dynamic flip-flop sense amplifiers, in which a reference level is generated on the unselected bit lines with dummy cells, realize the high-speed and low-power operation. The potential of the dummy column is detected to control the sense amplifiers and decoders in a self-timed manner. Simulated results ensure the effectiveness of this sensing scheme for 5-V-only megabit flash E2PROMs (electrically erasable and programmable ROMs).",

author = "Kazuo Kobayashi and Takeshi Nakayama and Masanori Hayashikoshi and Yoshikazu Miyawaki and Yasushi Terada and Hideaki Arima and Takayuki Matsukawa and Tsutomu Yoshihara",

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AU - Kobayashi, Kazuo

AU - Nakayama, Takeshi

AU - Hayashikoshi, Masanori

AU - Miyawaki, Yoshikazu

AU - Terada, Yasushi

AU - Arima, Hideaki

AU - Matsukawa, Takayuki

AU - Yoshihara, Tsutomu

PY - 1989

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N2 - A novel sensing scheme for high-density and high-speed sensing with a sub-10-μA cell current is presented. A source biasing method, which enhances the cell current drivability, and dynamic flip-flop sense amplifiers, in which a reference level is generated on the unselected bit lines with dummy cells, realize the high-speed and low-power operation. The potential of the dummy column is detected to control the sense amplifiers and decoders in a self-timed manner. Simulated results ensure the effectiveness of this sensing scheme for 5-V-only megabit flash E2PROMs (electrically erasable and programmable ROMs).

AB - A novel sensing scheme for high-density and high-speed sensing with a sub-10-μA cell current is presented. A source biasing method, which enhances the cell current drivability, and dynamic flip-flop sense amplifiers, in which a reference level is generated on the unselected bit lines with dummy cells, realize the high-speed and low-power operation. The potential of the dummy column is detected to control the sense amplifiers and decoders in a self-timed manner. Simulated results ensure the effectiveness of this sensing scheme for 5-V-only megabit flash E2PROMs (electrically erasable and programmable ROMs).

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BT - Symp VLSI Circuit 1989

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