Shift-aligned GSG transitions through a silicon wafer

Tamotsu Nishino; Yoshio Fujii; Hiroshi Fukumoto; Yukihisa Yoshida; Moriyasu Miyazaki; Tadashi Takagi

doi:10.1109/EUMC.2005.1608821

Shift-aligned GSG transitions through a silicon wafer

Tamotsu Nishino^*, Yoshio Fujii, Hiroshi Fukumoto, Yukihisa Yoshida, Moriyasu Miyazaki, Tadashi Takagi

^*この研究の対応する著者

研究成果: Conference contribution

抄録

Transitions composed of three via-holes, which are aligned in triangular shape, is proposed. The transition realized a high-frequency signal path from the surface of a thick silicon wafer to the other side. To reduce the reflection loss, the signal via is disposed shifted. The transition is fabricated with our developing molten solder ejection method, which ejects small droplets of solder like an ink-jet-printer. Without utilizing thick metallizing process inside the holes, high aspect ratio structure was achieved. The height of the holes is 250μm in this study with diameter of 100μm. The measured results showed the shift-aligned GSG transition had 0.4dB loss at 40GHz.

本文言語	English
ホスト出版物のタイトル	35th European Microwave Conference 2005 - Conference Proceedings
ページ	173-175
ページ数	3
DOI	https://doi.org/10.1109/EUMC.2005.1608821
出版ステータス	Published - 2005
外部発表	はい
イベント	2005 European Microwave Conference - Paris, France 継続期間: 2005 10月 4 → 2005 10月 6

出版物シリーズ

名前	35th European Microwave Conference 2005 - Conference Proceedings
巻	1

Conference

Conference	2005 European Microwave Conference
国/地域	France
City	Paris
Period	05/10/4 → 05/10/6

ASJC Scopus subject areas

工学（全般）

文献へのアクセス

10.1109/EUMC.2005.1608821

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引用スタイル

Nishino, T, Fujii, Y, Fukumoto, H, Yoshida, Y, Miyazaki, M & Takagi, T 2005, Shift-aligned GSG transitions through a silicon wafer. in 35th European Microwave Conference 2005 - Conference Proceedings., 1608821, 35th European Microwave Conference 2005 - Conference Proceedings, vol. 1, pp. 173-175, 2005 European Microwave Conference, Paris, France, 05/10/4. https://doi.org/10.1109/EUMC.2005.1608821

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abstract = "Transitions composed of three via-holes, which are aligned in triangular shape, is proposed. The transition realized a high-frequency signal path from the surface of a thick silicon wafer to the other side. To reduce the reflection loss, the signal via is disposed shifted. The transition is fabricated with our developing molten solder ejection method, which ejects small droplets of solder like an ink-jet-printer. Without utilizing thick metallizing process inside the holes, high aspect ratio structure was achieved. The height of the holes is 250μm in this study with diameter of 100μm. The measured results showed the shift-aligned GSG transition had 0.4dB loss at 40GHz.",

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AU - Nishino, Tamotsu

AU - Fujii, Yoshio

AU - Fukumoto, Hiroshi

AU - Yoshida, Yukihisa

AU - Miyazaki, Moriyasu

AU - Takagi, Tadashi

PY - 2005

Y1 - 2005

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AB - Transitions composed of three via-holes, which are aligned in triangular shape, is proposed. The transition realized a high-frequency signal path from the surface of a thick silicon wafer to the other side. To reduce the reflection loss, the signal via is disposed shifted. The transition is fabricated with our developing molten solder ejection method, which ejects small droplets of solder like an ink-jet-printer. Without utilizing thick metallizing process inside the holes, high aspect ratio structure was achieved. The height of the holes is 250μm in this study with diameter of 100μm. The measured results showed the shift-aligned GSG transition had 0.4dB loss at 40GHz.

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Shift-aligned GSG transitions through a silicon wafer

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