Si island formation on domain boundaries induced by Ar ion irradiation on high-temperature Si(III)-7 × 7 dimer-adatom-stacking fault surfaces

Makoto Uchigasaki; Kenichi Tomiki; Takefumi Kamioka; Eiji Nakayama; Takanobu Watanabe; Iwao Ohdomari

doi:10.1143/JJAP.44.L313

Si island formation on domain boundaries induced by Ar ion irradiation on high-temperature Si(III)-7 × 7 dimer-adatom-stacking fault surfaces

Makoto Uchigasaki^*, Kenichi Tomiki, Takefumi Kamioka, Eiji Nakayama, Takanobu Watanabe, Iwao Ohdomari

^*この研究の対応する著者

基幹理工学部

研究成果: Article › 査読

5 被引用数 (Scopus)

抄録

Using a low-energy ion gun/high-temperature scanning tunneling microscope combined system (IG/STM), we observed the atomic scale behavior of a Si surface kept at 500°C before, during and after Ar ion irradiation. We found that Si islands grew up within ion irradiation selectively along the boundaries of domains of 7 × 7 dimer-adatom-stacking (DAS) faults. The Si islands were 1 double atomic layer high and had the 7 × 7 DAS reconstruction. The area of the islands increased linearly with ion doses up to 2.5 × 10 ¹⁴ cm^-2.

本文言語	English
ページ（範囲）	L313-L314
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	44
号	8-11
DOI	https://doi.org/10.1143/JJAP.44.L313
出版ステータス	Published - 2005

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.1143/JJAP.44.L313

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引用スタイル

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abstract = "Using a low-energy ion gun/high-temperature scanning tunneling microscope combined system (IG/STM), we observed the atomic scale behavior of a Si surface kept at 500°C before, during and after Ar ion irradiation. We found that Si islands grew up within ion irradiation selectively along the boundaries of domains of 7 × 7 dimer-adatom-stacking (DAS) faults. The Si islands were 1 double atomic layer high and had the 7 × 7 DAS reconstruction. The area of the islands increased linearly with ion doses up to 2.5 × 10 14 cm-2.",

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author = "Makoto Uchigasaki and Kenichi Tomiki and Takefumi Kamioka and Eiji Nakayama and Takanobu Watanabe and Iwao Ohdomari",

year = "2005",

doi = "10.1143/JJAP.44.L313",

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T1 - Si island formation on domain boundaries induced by Ar ion irradiation on high-temperature Si(III)-7 × 7 dimer-adatom-stacking fault surfaces

AU - Uchigasaki, Makoto

AU - Tomiki, Kenichi

AU - Kamioka, Takefumi

AU - Nakayama, Eiji

AU - Watanabe, Takanobu

AU - Ohdomari, Iwao

PY - 2005

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N2 - Using a low-energy ion gun/high-temperature scanning tunneling microscope combined system (IG/STM), we observed the atomic scale behavior of a Si surface kept at 500°C before, during and after Ar ion irradiation. We found that Si islands grew up within ion irradiation selectively along the boundaries of domains of 7 × 7 dimer-adatom-stacking (DAS) faults. The Si islands were 1 double atomic layer high and had the 7 × 7 DAS reconstruction. The area of the islands increased linearly with ion doses up to 2.5 × 10 14 cm-2.

AB - Using a low-energy ion gun/high-temperature scanning tunneling microscope combined system (IG/STM), we observed the atomic scale behavior of a Si surface kept at 500°C before, during and after Ar ion irradiation. We found that Si islands grew up within ion irradiation selectively along the boundaries of domains of 7 × 7 dimer-adatom-stacking (DAS) faults. The Si islands were 1 double atomic layer high and had the 7 × 7 DAS reconstruction. The area of the islands increased linearly with ion doses up to 2.5 × 10 14 cm-2.

KW - Annealing

KW - Crystal growth

KW - Point defect

KW - Surface modification

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