抄録
Nano-photodiodes with a subwavelength active area using the optical near-field enhanced by surface plasmon resonance are proposed. We fabricated a Si Schottky photodiode that consists of an active area of 300 nm in diameter and a surface plasmon antenna to generate the carrier within the active area efficiently. The fabricated photodiode shows an increase of the photocurrent by several tenfold compared to that without a surface plasmon antenna. This result suggests an enhanced photogeneration of carriers in a semiconductor via surface plasmon resonance. Such a Si nano-photodiode is a potential high-speed optical signal detector because the opto-electronic conversion process occurs within a subwavelength scale.
| 本文言語 | English |
|---|---|
| ページ（範囲） | L364-L366 |
| ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
| 巻 | 44 |
| 号 | 12-15 |
| DOI | |
| 出版ステータス | Published - 2005 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）