抄録
We have observed zero resistivity above 10 K and an onset of resistivity reduction at 25.2 K in a heavily B-doped diamond film. However, the effective carrier concentration is similar to that of superconducting diamond with a lower Tc. We found that the carrier has a longer mean free path and lifetime than in the previous report, indicating that this highest Tc diamond has better crystallinity compared to that of other superconducting diamond films. In addition, the susceptibility shows a small transition above 20 K in the high quality diamond, suggesting a signature of superconductivity above 20 K. These results strongly suggest that heavier carrier doped defect-free crystalline diamond could give rise to high Tc diamond.
本文言語 | English |
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論文番号 | 052601 |
ジャーナル | Applied Physics Letters |
巻 | 106 |
号 | 5 |
DOI | |
出版ステータス | Published - 2015 2月 2 |
ASJC Scopus subject areas
- 物理学および天文学(その他)