Silicon carbide wafer bonding by modified surface activated bonding method

Tadatomo Suga*, Fengwen Mu, Masahisa Fujino, Yoshikazu Takahashi, Haruo Nakazawa, Kenichi Iguchi


研究成果: Article査読

43 被引用数 (Scopus)


4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding between the SiC wafers with tensile strength greater than 32 MPa was demonstrated at room temperature under 5 kN force for 300 s. Almost the entire wafer has been bonded very well except a small peripheral region and few voids. The interface structure was analyzed to verify the bonding mechanism. It was found an amorphous layer existed as an intermediate layer at the interface. After annealing at 1273K in vacuum for 1 h, the bonding tensile strength was still higher than 32MPa. The interface changes after annealing were also studied. The results show that the thickness of the amorphous layer was reduced to half after annealing.

ジャーナルJapanese journal of applied physics
出版ステータスPublished - 2015 3月 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)


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