TY - JOUR
T1 - Silicon electrodeposition in water-soluble KF-KCl molten salt
T2 - Optimization of electrolysis conditions at 923 K
AU - Yasuda, Kouji
AU - Maeda, Kazuma
AU - Nohira, Toshiyuki
AU - Hagiwara, Rika
AU - Homma, Takayuki
N1 - Publisher Copyright:
© 2015 The Electrochemical Society.
PY - 2016
Y1 - 2016
N2 - To establish a new Si-electrodeposition process, the optimum conditions for obtaining adherent, compact, and smooth Si films using molten KF-KCl-K2SiF6 were investigated at 923 K. Galvanostatic electrolysis was conducted on a Ag substrate in eutectic KF-KCl (45:55 mol%) with various current densities (10-500 mA cm-2) and K2SiF6 concentrations (0.5-5.0 mol%). Cross-sectional scanning electron microscopy (SEM) of the deposits revealed that compact and smooth Si films form at intermediate K2SiF6 concentrations and current densities. The relationship between the deposition conditions and Si morphology is discussed in terms of the electrodeposition mechanism.
AB - To establish a new Si-electrodeposition process, the optimum conditions for obtaining adherent, compact, and smooth Si films using molten KF-KCl-K2SiF6 were investigated at 923 K. Galvanostatic electrolysis was conducted on a Ag substrate in eutectic KF-KCl (45:55 mol%) with various current densities (10-500 mA cm-2) and K2SiF6 concentrations (0.5-5.0 mol%). Cross-sectional scanning electron microscopy (SEM) of the deposits revealed that compact and smooth Si films form at intermediate K2SiF6 concentrations and current densities. The relationship between the deposition conditions and Si morphology is discussed in terms of the electrodeposition mechanism.
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U2 - 10.1149/2.0791603jes
DO - 10.1149/2.0791603jes
M3 - Article
AN - SCOPUS:84955492753
SN - 0013-4651
VL - 163
SP - D95-D99
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 3
ER -
