TY - CHAP
T1 - Silicon (Si) and germanium (Ge) in optical devices
AU - Ohashi, K.
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2011/2
Y1 - 2011/2
N2 - This chapter describes optical devices which use Si, SiGe, and Ge technologies for electronics. It starts with the optical waveguides and optical resonators which create slow light for microphotonic devices. Then, electro-optical modulation, photo-carrier generation, and photo emission will be discussed on the basis of nano- and micro-structures. Both modulators and detectors are critical components of the on-chip optical interconnections that are expected to enable low-power-dissipation electronics systems. Ultra-small electric capacitance accomplished through silicon photonics and nano-photonics would provide a strong tool for that purpose. Multi-modal sensing is also a promising area for these new optical devices.
AB - This chapter describes optical devices which use Si, SiGe, and Ge technologies for electronics. It starts with the optical waveguides and optical resonators which create slow light for microphotonic devices. Then, electro-optical modulation, photo-carrier generation, and photo emission will be discussed on the basis of nano- and micro-structures. Both modulators and detectors are critical components of the on-chip optical interconnections that are expected to enable low-power-dissipation electronics systems. Ultra-small electric capacitance accomplished through silicon photonics and nano-photonics would provide a strong tool for that purpose. Multi-modal sensing is also a promising area for these new optical devices.
KW - Electro-optical modulator
KW - Optical waveguide
KW - Photodiode
KW - Silicon photonics
KW - Surface-plasmons
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U2 - 10.1533/9780857091420.4.551
DO - 10.1533/9780857091420.4.551
M3 - Chapter
AN - SCOPUS:84903050931
SN - 9781845696894
SP - 551
EP - 574
BT - Silicon-Germanium (SiGe) Nanostructures
PB - Elsevier Ltd
ER -