Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS

K. Shih; M. Nimura; Y. Kanehira; T. Ogashiwa; J. Mizuno; S. Shoji

doi:10.1109/MEMSYS.2013.6474237

Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS

K. Shih^*, M. Nimura, Y. Kanehira, T. Ogashiwa, J. Mizuno, S. Shoji

^*この研究の対応する著者

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

We developed a novel through silicon via (TSV) fabrication process using dry filling of sub-micron Au particle for stack type 3D MEMS. X-ray image shows that the slurry including Au particles was uniformly filled into vias with squeegee under low pressure in short time. TSV with a diameter of 30 μm and depth of 70μm were successfully fabricated. The resistance of single TSV was 0.11 Ω. The dielectric withstanding voltage of SiO₂ insulating layer was about 150 V. The result indicates that high through put fabrication of TSV for 3D MEMS can be realized with a simple method.

本文言語	English
ホスト出版物のタイトル	IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
ページ	299-302
ページ数	4
DOI	https://doi.org/10.1109/MEMSYS.2013.6474237
出版ステータス	Published - 2013 4月 2
イベント	IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 - Taipei, Taiwan, Province of China 継続期間: 2013 1月 20 → 2013 1月 24

出版物シリーズ

名前	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN（印刷版）	1084-6999

Conference

Conference	IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
国/地域	Taiwan, Province of China
City	Taipei
Period	13/1/20 → 13/1/24

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
機械工学
電子工学および電気工学

文献へのアクセス

10.1109/MEMSYS.2013.6474237

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引用スタイル

Shih, K., Nimura, M., Kanehira, Y., Ogashiwa, T., Mizuno, J., & Shoji, S. (2013). Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS. In IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 (pp. 299-302). 記事 6474237 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). https://doi.org/10.1109/MEMSYS.2013.6474237

Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS. / Shih, K.; Nimura, M.; Kanehira, Y. その他.
IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013. 2013. p. 299-302 6474237 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

研究成果: Conference contribution

Shih, K, Nimura, M, Kanehira, Y, Ogashiwa, T, Mizuno, J & Shoji, S 2013, Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS. in IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013., 6474237, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), pp. 299-302, IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013, Taipei, Taiwan, Province of China, 13/1/20. https://doi.org/10.1109/MEMSYS.2013.6474237

Shih K, Nimura M, Kanehira Y, Ogashiwa T, Mizuno J, Shoji S. Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS. In IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013. 2013. p. 299-302. 6474237. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMSYS.2013.6474237

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abstract = "We developed a novel through silicon via (TSV) fabrication process using dry filling of sub-micron Au particle for stack type 3D MEMS. X-ray image shows that the slurry including Au particles was uniformly filled into vias with squeegee under low pressure in short time. TSV with a diameter of 30 μm and depth of 70μm were successfully fabricated. The resistance of single TSV was 0.11 Ω. The dielectric withstanding voltage of SiO2 insulating layer was about 150 V. The result indicates that high through put fabrication of TSV for 3D MEMS can be realized with a simple method.",

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AU - Shih, K.

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AU - Shoji, S.

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AB - We developed a novel through silicon via (TSV) fabrication process using dry filling of sub-micron Au particle for stack type 3D MEMS. X-ray image shows that the slurry including Au particles was uniformly filled into vias with squeegee under low pressure in short time. TSV with a diameter of 30 μm and depth of 70μm were successfully fabricated. The resistance of single TSV was 0.11 Ω. The dielectric withstanding voltage of SiO2 insulating layer was about 150 V. The result indicates that high through put fabrication of TSV for 3D MEMS can be realized with a simple method.

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Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS

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