@inproceedings{9366d2fc9ed243dfa21594454a34d463,
title = "Single ion implantation of Ge donor impurity in silicon transistors",
abstract = "Ge impurities in silicon generate deep donor states in the silicon bandgap. We demonstrate the single ion implantation of Ge ions in the channel of silicon transistors and their electrical activation. Because of the deep donor ground state of Ge, we realize room temperature impurity bands. Our method enables us to create atomic scale conductive paths in silicon with no need of external gate voltages.",
keywords = "Decision support systems, Electron devices, Meetings, Nanoelectronics, Nanoscale devices, Silicon",
author = "E. Prati and Y. Chiba and M. Yano and K. Kumagai and M. Hori and G. Ferrari and T. Shinada and T. Tanii",
note = "Publisher Copyright: {\textcopyright} 2015 JSAP. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; Silicon Nanoelectronics Workshop, SNW 2015 ; Conference date: 14-06-2015 Through 15-06-2015",
year = "2015",
month = sep,
day = "24",
language = "English",
series = "2015 Silicon Nanoelectronics Workshop, SNW 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 Silicon Nanoelectronics Workshop, SNW 2015",
}