Single-mode Operation of 1.3-μm Membrane Distributed Reflector Lasers on SiC Wafers

Suguru Yamaoka; Ryo Nakao; Takuro Fujii; Koji Takeda; Tatsurou Hiraki; Hidetaka Nishi; Takaaki Kakitsuka; Tai Tsuchizawa; Shinji Matsuo

doi:10.1109/ICIPRM.2019.8819274

Single-mode Operation of 1.3-μm Membrane Distributed Reflector Lasers on SiC Wafers

Suguru Yamaoka, Ryo Nakao, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Hidetaka Nishi, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

研究成果: Conference contribution

抄録

We have fabricated a 1.3-μm membrane distributed reflector (DR) lasers on a SiC substrate using direct-bonding and buried regrowth techniques. The side-mode suppression ratio of ∼40 dB was obtained in room-temperature continuous-wave (RT-CW) operation.

本文言語	English
ホスト出版物のタイトル	2019 Compound Semiconductor Week, CSW 2019 - Proceedings
出版社	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子版）	9781728100807
DOI	https://doi.org/10.1109/ICIPRM.2019.8819274
出版ステータス	Published - 2019 5月
外部発表	はい
イベント	2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan 継続期間: 2019 5月 19 → 2019 5月 23

出版物シリーズ

名前	2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Conference

Conference	2019 Compound Semiconductor Week, CSW 2019
国/地域	Japan
City	Nara
Period	19/5/19 → 19/5/23

ASJC Scopus subject areas

電子工学および電気工学
産業および生産工学
電子材料、光学材料、および磁性材料
材料化学
原子分子物理学および光学

文献へのアクセス

10.1109/ICIPRM.2019.8819274

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引用スタイル

Yamaoka, S., Nakao, R., Fujii, T., Takeda, K., Hiraki, T., Nishi, H., Kakitsuka, T., Tsuchizawa, T., & Matsuo, S. (2019). Single-mode Operation of 1.3-μm Membrane Distributed Reflector Lasers on SiC Wafers. In 2019 Compound Semiconductor Week, CSW 2019 - Proceedings Article 8819274 (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2019.8819274

Yamaoka, S, Nakao, R, Fujii, T, Takeda, K, Hiraki, T, Nishi, H, Kakitsuka, T, Tsuchizawa, T & Matsuo, S 2019, Single-mode Operation of 1.3-μm Membrane Distributed Reflector Lasers on SiC Wafers. in 2019 Compound Semiconductor Week, CSW 2019 - Proceedings., 8819274, 2019 Compound Semiconductor Week, CSW 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 Compound Semiconductor Week, CSW 2019, Nara, Japan, 19/5/19. https://doi.org/10.1109/ICIPRM.2019.8819274

Yamaoka S, Nakao R, Fujii T, Takeda K, Hiraki T, Nishi H その他. Single-mode Operation of 1.3-μm Membrane Distributed Reflector Lasers on SiC Wafers. In 2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8819274. (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). doi: 10.1109/ICIPRM.2019.8819274

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title = "Single-mode Operation of 1.3-μm Membrane Distributed Reflector Lasers on SiC Wafers",

abstract = "We have fabricated a 1.3-μm membrane distributed reflector (DR) lasers on a SiC substrate using direct-bonding and buried regrowth techniques. The side-mode suppression ratio of ∼40 dB was obtained in room-temperature continuous-wave (RT-CW) operation.",

keywords = "Membrane distributed reflector laser, SiC, Single-mode operation",

author = "Suguru Yamaoka and Ryo Nakao and Takuro Fujii and Koji Takeda and Tatsurou Hiraki and Hidetaka Nishi and Takaaki Kakitsuka and Tai Tsuchizawa and Shinji Matsuo",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Compound Semiconductor Week, CSW 2019 ; Conference date: 19-05-2019 Through 23-05-2019",

year = "2019",

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doi = "10.1109/ICIPRM.2019.8819274",

language = "English",

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AU - Yamaoka, Suguru

AU - Nakao, Ryo

AU - Fujii, Takuro

AU - Takeda, Koji

AU - Hiraki, Tatsurou

AU - Nishi, Hidetaka

AU - Kakitsuka, Takaaki

AU - Tsuchizawa, Tai

AU - Matsuo, Shinji

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N2 - We have fabricated a 1.3-μm membrane distributed reflector (DR) lasers on a SiC substrate using direct-bonding and buried regrowth techniques. The side-mode suppression ratio of ∼40 dB was obtained in room-temperature continuous-wave (RT-CW) operation.

AB - We have fabricated a 1.3-μm membrane distributed reflector (DR) lasers on a SiC substrate using direct-bonding and buried regrowth techniques. The side-mode suppression ratio of ∼40 dB was obtained in room-temperature continuous-wave (RT-CW) operation.

KW - Membrane distributed reflector laser

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KW - Single-mode operation

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BT - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Compound Semiconductor Week, CSW 2019

Y2 - 19 May 2019 through 23 May 2019

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Single-mode Operation of 1.3-μm Membrane Distributed Reflector Lasers on SiC Wafers

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出版物シリーズ

Conference

ASJC Scopus subject areas

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