TY - JOUR
T1 - Single-walled carbon nanotube aggregates for solution-processed field effect transistors
AU - Shiraishi, Masashi
AU - Takenobu, Taishi
AU - Iwai, Toshinori
AU - Iwasa, Yoshihiro
AU - Kataura, Hiromichi
AU - Ata, Masafumi
PY - 2004/8/11
Y1 - 2004/8/11
N2 - Characteristics of aggregated single-walled carbon nanotube (SWNT) as a channel of field effect transistors (FETs) were examined. SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm 2/V s, ≈100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, and the present product exhibited the ambipolar character observed in individual-SWNT-FETs.
AB - Characteristics of aggregated single-walled carbon nanotube (SWNT) as a channel of field effect transistors (FETs) were examined. SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm 2/V s, ≈100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, and the present product exhibited the ambipolar character observed in individual-SWNT-FETs.
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U2 - 10.1016/j.cplett.2004.06.130
DO - 10.1016/j.cplett.2004.06.130
M3 - Article
AN - SCOPUS:3843054522
SN - 0009-2614
VL - 394
SP - 110
EP - 113
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 1-3
ER -