TY - JOUR
T1 - Smart power devices and ICs using GaAs and wide and extreme bandgap semiconductors
AU - Chow, T. Paul
AU - Omura, Ichiro
AU - Higashiwaki, Masataka
AU - Kawarada, Hiroshi
AU - Pala, Vipindas
N1 - Funding Information:
The work of T. P. Chow was supported in part by the Engineering Research Centers Program of the National Science Foundation through NSF Cooperative under Agreement EEC-0812056, in part byNew York State through NYSTAR under Contract C130145, and in part by the Advanced Research Projects Agency-U.S. Department of Energy under Grant DE-AR0000304. The review of this paper was arranged by Editor W. T. Ng.
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2017/3
Y1 - 2017/3
N2 - We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power electronics applications. We examine their device structures and associated materials/process technologies and selectively review the recent experimental demonstrations of high voltage power devices and IC structures of these semiconductors. We discuss the technical obstacles that still need to be addressed and overcome before large-scale commercialization commences.
AB - We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power electronics applications. We examine their device structures and associated materials/process technologies and selectively review the recent experimental demonstrations of high voltage power devices and IC structures of these semiconductors. We discuss the technical obstacles that still need to be addressed and overcome before large-scale commercialization commences.
KW - Gallium arsenide
KW - power integrated circuits
KW - power semiconductor devices
KW - wide bandgap semiconductors
UR - http://www.scopus.com/inward/record.url?scp=85012995022&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85012995022&partnerID=8YFLogxK
U2 - 10.1109/TED.2017.2653759
DO - 10.1109/TED.2017.2653759
M3 - Article
AN - SCOPUS:85012995022
SN - 0018-9383
VL - 64
SP - 856
EP - 873
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 3
M1 - 7851006
ER -