Solution-based fabrication of high-k dielectrics using oxide nanosheets

Minoru Osada; Kosho Akatsuka; Yasuo Ebina; Hiroshi Funakubo; Kazunori Takada; Takayoshi Sasaki

doi:10.1149/1.3206633

Solution-based fabrication of high-k dielectrics using oxide nanosheets

Minoru Osada^*, Kosho Akatsuka, Yasuo Ebina, Hiroshi Funakubo, Kazunori Takada, Takayoshi Sasaki

^*この研究の対応する著者

研究成果: Conference contribution

抄録

We report a novel procedure for fabricating high-k dielectric nanofilms by using titania nanosheet as a building block. Langmuir-Blodgett deposition using atomically flat SrRuO₃ or Pt substrates is advantageous as a means of fabricating atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of a well-ordered lamellar structure without an interfacial dead layer. These nanofilms exhibited both high dielectric constant (ε_r ∼125) and low leakage current density (J < 10^-7 A/cm ²) even for thicknesses as low as 10 nm. These results indicate that titania nanosheet is a very promising candidate as a high-k nanoblock, and its bottom-up fabrication provides new opportunities for the development of high-k devices.

本文言語	English
ホスト出版物のタイトル	ECS Transactions
ページ	349-352
ページ数	4
巻	25
版	6
DOI	https://doi.org/10.1149/1.3206633
出版ステータス	Published - 2009
外部発表	はい
イベント	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria 継続期間: 2009 10月 5 → 2009 10月 7

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Other	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
国/地域	Austria
City	Vienna
Period	09/10/5 → 09/10/7

ASJC Scopus subject areas

工学（全般）

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10.1149/1.3206633

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Osada, M, Akatsuka, K, Ebina, Y, Funakubo, H, Takada, K & Sasaki, T 2009, Solution-based fabrication of high-k dielectrics using oxide nanosheets. in ECS Transactions. 6 edn, vol. 25, pp. 349-352, 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society, Vienna, Austria, 09/10/5. https://doi.org/10.1149/1.3206633

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abstract = "We report a novel procedure for fabricating high-k dielectric nanofilms by using titania nanosheet as a building block. Langmuir-Blodgett deposition using atomically flat SrRuO3 or Pt substrates is advantageous as a means of fabricating atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of a well-ordered lamellar structure without an interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thicknesses as low as 10 nm. These results indicate that titania nanosheet is a very promising candidate as a high-k nanoblock, and its bottom-up fabrication provides new opportunities for the development of high-k devices.",

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AU - Osada, Minoru

AU - Akatsuka, Kosho

AU - Ebina, Yasuo

AU - Funakubo, Hiroshi

AU - Takada, Kazunori

AU - Sasaki, Takayoshi

PY - 2009

Y1 - 2009

N2 - We report a novel procedure for fabricating high-k dielectric nanofilms by using titania nanosheet as a building block. Langmuir-Blodgett deposition using atomically flat SrRuO3 or Pt substrates is advantageous as a means of fabricating atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of a well-ordered lamellar structure without an interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thicknesses as low as 10 nm. These results indicate that titania nanosheet is a very promising candidate as a high-k nanoblock, and its bottom-up fabrication provides new opportunities for the development of high-k devices.

AB - We report a novel procedure for fabricating high-k dielectric nanofilms by using titania nanosheet as a building block. Langmuir-Blodgett deposition using atomically flat SrRuO3 or Pt substrates is advantageous as a means of fabricating atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of a well-ordered lamellar structure without an interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thicknesses as low as 10 nm. These results indicate that titania nanosheet is a very promising candidate as a high-k nanoblock, and its bottom-up fabrication provides new opportunities for the development of high-k devices.

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ER -

Solution-based fabrication of high-k dielectrics using oxide nanosheets

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