TY - JOUR
T1 - Solution-processed fabrication of single-walled carbon nanotube field effect transistors
AU - Shiraishi, M.
AU - Takenobu, T.
AU - Iwasa, Y.
AU - Iwai, T.
AU - Kataura, H.
AU - Ata, M.
PY - 2005
Y1 - 2005
N2 - We report the fabrication of thin film SWNT-FETs using a novel and simple solution process methodology. The SWNTs are dispersed in an organic solution in a narrow bundle structure and form nonaligned arrays which become the channels of FETs. The thin film FETs operate even at low temperature, and have the mobility that is about 100 times greater than those of other solution-processed organic thin film FETs. This simple fabrication process will help develop a novel route for the large-scale liquid phase production of commercially available flexible organic devices.
AB - We report the fabrication of thin film SWNT-FETs using a novel and simple solution process methodology. The SWNTs are dispersed in an organic solution in a narrow bundle structure and form nonaligned arrays which become the channels of FETs. The thin film FETs operate even at low temperature, and have the mobility that is about 100 times greater than those of other solution-processed organic thin film FETs. This simple fabrication process will help develop a novel route for the large-scale liquid phase production of commercially available flexible organic devices.
KW - Field effect transistor
KW - Molecular electronic device
KW - Single-walled carbon nanotubes
KW - Thin films
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U2 - 10.1081/FST-200039467
DO - 10.1081/FST-200039467
M3 - Article
AN - SCOPUS:17644373444
SN - 1536-383X
VL - 13
SP - 485
EP - 489
JO - Fullerenes Nanotubes and Carbon Nanostructures
JF - Fullerenes Nanotubes and Carbon Nanostructures
IS - SUPPL. 1
ER -