Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing

Akito Suzuki; Takefumi Kamioka; Yoshinari Kamakura; Kenji Ohmori; Keisaku Yamada; Takanobu Watanabe

doi:10.1109/IEDM.2014.7047139

Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing

Akito Suzuki, Takefumi Kamioka, Yoshinari Kamakura, Kenji Ohmori, Keisaku Yamada, Takanobu Watanabe

基幹理工学部

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

We numerically demonstrate that a random dopant fluctuation (RDF) in a source region causes a noticeable variability in the on-current of Si nanowire (NW) transistors, and its effect is much larger than that of a random telegraph noise (RTN). This work assesses the static and dynamic variability of NW device characteristics using the ensemble Monte Carlo/molecular dynamics (EMC/MD) simulation, which employs parallel computing technique using a graphic processing unit (GPU). The current flow in a one-dimensional NW device is determined by the number of dopants at the source edge, indicating the importance of forming an abrupt source-channel boundary to suppress the variability.

本文言語	English
ホスト出版物のタイトル	2014 IEEE International Electron Devices Meeting, IEDM 2014
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	30.1.1-30.1.4
版	February
ISBN（電子版）	9781479980017
DOI	https://doi.org/10.1109/IEDM.2014.7047139
出版ステータス	Published - 2015 2月 20
イベント	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States 継続期間: 2014 12月 15 → 2014 12月 17

出版物シリーズ

名前	Technical Digest - International Electron Devices Meeting, IEDM
番号	February
巻	2015-February
ISSN（印刷版）	0163-1918

Other

Other	2014 60th IEEE International Electron Devices Meeting, IEDM 2014
国/地域	United States
City	San Francisco
Period	14/12/15 → 14/12/17

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

文献へのアクセス

10.1109/IEDM.2014.7047139

他のファイルとリンク

フィンガープリント

「Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Suzuki, A., Kamioka, T., Kamakura, Y., Ohmori, K., Yamada, K., & Watanabe, T. (2015). Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 30.1.1-30.1.4). 記事 7047139 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047139

Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing. / Suzuki, Akito; Kamioka, Takefumi; Kamakura, Yoshinari その他.
2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 30.1.1-30.1.4 7047139 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February).

研究成果: Conference contribution

Suzuki, A, Kamioka, T, Kamakura, Y, Ohmori, K, Yamada, K & Watanabe, T 2015, Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing. in 2014 IEEE International Electron Devices Meeting, IEDM 2014. February edn, 7047139, Technical Digest - International Electron Devices Meeting, IEDM, no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 30.1.1-30.1.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 14/12/15. https://doi.org/10.1109/IEDM.2014.7047139

Suzuki A, Kamioka T, Kamakura Y, Ohmori K, Yamada K, Watanabe T. Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing. In 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 30.1.1-30.1.4. 7047139. (Technical Digest - International Electron Devices Meeting, IEDM; February). doi: 10.1109/IEDM.2014.7047139

Suzuki, Akito ; Kamioka, Takefumi ; Kamakura, Yoshinari その他. / Source-induced RDF overwhelms RTN in nanowire transistor : Statistical analysis with full device EMC/MD simulation accelerated by GPU computing. 2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 30.1.1-30.1.4 (Technical Digest - International Electron Devices Meeting, IEDM; February).

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