Spatial variability in large area single and few-layer CVD graphene

Clara F. Moldovan, Krzysztof Gajewski, Michele Tamagnone, Robert S. Weatherup, Hisashi Sugime, Anna Szumska, Wolfgang A. Vitale, John Robertson, Adrian M. Ionescu

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Variability in graphene can result from the material synthesis or post-processing steps as well as the surrounding environment. This is a critical issue for the performance of large area devices as well as for the large-scale production of micro- and nano-scale graphene devices, leading to low yield and reliability. The aim of this study is to investigate variability of single and few-layer graphene structures, on different substrates, and the effects it has on its electronic properties. We demonstrate a combination of Kelvin probe force microscopy (KPFM) and non-contact Fourier transform infrared spectroscopy (FTIR) measurements for centimeter-scale quantitative mapping of the electrical variability of large-area chemical vapor deposited graphene films. KPFM provides statistical insight into the influence of micro-scale defects on the surface potential, while FTIR gives the spatially averaged chemical potential of the graphene structures. Test structures consisting of single-, bi- and few-layer graphene on SÌO2 and AI2O3 were fabricated and analyzed.

本文言語English
ホスト出版物のタイトルEUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
出版社Institute of Electrical and Electronics Engineers Inc.
ページ85-88
ページ数4
ISBN(電子版)9781479969111
DOI
出版ステータスPublished - 2015 3月 18
外部発表はい
イベント2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 - Bologna, Italy
継続期間: 2015 1月 262015 1月 28

出版物シリーズ

名前EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

Other

Other2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015
国/地域Italy
CityBologna
Period15/1/2615/1/28

ASJC Scopus subject areas

  • 電子工学および電気工学

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