Stacking-layer-number dependence of highly stacked InAs quantum dot laser diodes fabricated using strain-compensation technique

Kouichi Akahane*, Naokatsu Yamamoto, Tetsuya Kawanishi, Sergio Bietti, Ayami Takata, Yoshitaka Okada

*この研究の対応する著者

研究成果: Conference contribution

抄録

Semiconductor quantum dots (QDs) grown using self-assembly techniques in the Stranski- Krastanov (S-K) mode are expected to be useful for high-performance optical devices such as QD lasers. A significant amount of research has been carried out on the development of highperformance QD lasers because they offer the advantages of a low threshold current, temperature stability, high modulation bandwidth, and low chirp. To realize these high-performance devices, the surface QD density should be increased by fabricating a stacked structure. We have developed a growth method based on a strain-compensation technique that enables the fabrication of a high number of stacked InAs QD layers on an InP(311)B substrate. In this study, we employed the proposed method to fabricate QD laser diodes consisting of highly stacked QD layers and investigated the dependence of the diode parameters on the stacking layer number. We fabricated QD laser diodes with 5, 10, 15, and 20 QD layers in the active region. All of the laser diodes operated at around 1.55 μm at room temperature, and their threshold currents showed clear dependence on the stacking layer number. Laser diodes with more than 10 QD layers showed sufficient gain, i.e., the threshold currents decreased with a decrease in the cavity length. On the other hand, for laser diodes with less than 10 QD layers, the threshold currents increased with a decrease in the cavity length.

本文言語English
ホスト出版物のタイトルNovel In-Plane Semiconductor Lasers XI
DOI
出版ステータスPublished - 2012 3月 1
外部発表はい
イベントNovel In-Plane Semiconductor Lasers XI - San Francisco, CA, United States
継続期間: 2012 1月 232012 1月 26

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
8277
ISSN(印刷版)0277-786X

Other

OtherNovel In-Plane Semiconductor Lasers XI
国/地域United States
CitySan Francisco, CA
Period12/1/2312/1/26

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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