抄録
The equilibria in the Si(s)-Cl2(g) system have been studied at temperature from 1000 to 1300 K using a transpiration reactor. The equilibria are considered among Si(s)-Cl2(g)-SiCl2(g)-SiCl3(g)-SiCl4(g). The standard Gibbs energies of formation for the species of SiCl2(g) and SiCl3(g) species at these temperatures are determined simultaneously, where these subchloride species coexist in appreciable quantities with SiCl4 in the gas phase at these temperatures, as follows: SiCl2(g): ΔG°f·SiCl(2)·T(1000-1300 K)=-185.0-2.32×10-2 T kJ·mol-1 SiCl3(g): ΔG°f·SiCl(3)·T(1000-1300 K)=-401.1+3.28×10-2 T kJ·mol-1
本文言語 | English |
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ページ(範囲) | 156-163 |
ページ数 | 8 |
ジャーナル | Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals |
巻 | 59 |
号 | 2 |
出版ステータス | Published - 1995 2月 |
ASJC Scopus subject areas
- 金属および合金