TY - GEN
T1 - Statistical Modeling of SRAM PUF Cell Mismatch Shift Distribution after Hot Carrier Injection Burn-In
AU - Liu, Kunyang
AU - Takeuchi, Kiyoshi
AU - Shinohara, Hirofumi
N1 - Funding Information:
This research is supported by ROHM Co., Ltd. and VDEC, The University of Tokyo.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - This article presents statistical modeling for bitcell mismatch shift with respect to hot carrier injection (HCI) burn-in on a static random access memory (SRAM)-based physically unclonable function (PUF). A compound distribution based on a Poisson distribution and a Gamma distribution is used to model the mismatch shift. The Poisson distribution models the number of injected hot carriers, and the Gamma distribution models the mismatch shift value induced by a certain number of injected hot carriers. This model is evaluated by testing chips fabricated in a 130-nm CMOS process. Experimental results collected from 2-min to 8-min HCI burn-in match the model well. Results also show that the number of injected hot carriers has a linear relation with the burn-in time to the power 0.6.
AB - This article presents statistical modeling for bitcell mismatch shift with respect to hot carrier injection (HCI) burn-in on a static random access memory (SRAM)-based physically unclonable function (PUF). A compound distribution based on a Poisson distribution and a Gamma distribution is used to model the mismatch shift. The Poisson distribution models the number of injected hot carriers, and the Gamma distribution models the mismatch shift value induced by a certain number of injected hot carriers. This model is evaluated by testing chips fabricated in a 130-nm CMOS process. Experimental results collected from 2-min to 8-min HCI burn-in match the model well. Results also show that the number of injected hot carriers has a linear relation with the burn-in time to the power 0.6.
KW - Gamma distribution
KW - hot carrier injection (HCI)
KW - model
KW - physically unclonable function (PUF)
KW - Poisson distribution
KW - static random access memory (SRAM)
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U2 - 10.1109/ICMTS50340.2022.9898258
DO - 10.1109/ICMTS50340.2022.9898258
M3 - Conference contribution
AN - SCOPUS:85139817663
T3 - IEEE International Conference on Microelectronic Test Structures
BT - 2022 IEEE 34th International Conference on Microelectronic Test Structures, ICMTS 2022 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 34th IEEE International Conference on Microelectronic Test Structures, ICMTS 2022
Y2 - 21 March 2022 through 15 April 2022
ER -