抄録
We report on the nanometer-scale modification of a MoS2 surface by scanning tunneling microscopy (STM) with an electric field lower than that required for field evaporation by STM. It is known that a Pt-Ir STM tip dissolves H2 gas into atomic hydrogen which is chemically active. We applied this phenomenon to STM modification to lower the electric field necessary for atom detachment. A Pt-Ir tip was used to dissolve the H2 gas on the MoS2 surface. The gas-solid reaction enhanced the evaporation of the top-layer sulfur atoms, which were removed at a low electric field of about 2.4 V nm-1. The present study shows that we can control STM modification well with the same feedback loop as that used for STM observation.
本文言語 | English |
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ページ(範囲) | 588-590 |
ページ数 | 3 |
ジャーナル | Thin Solid Films |
巻 | 281-282 |
号 | 1-2 |
DOI | |
出版ステータス | Published - 1996 8月 1 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 表面および界面
- 表面、皮膜および薄膜
- 金属および合金
- 材料化学